Table of Contents
Advances in Optical Technologies
Volume 2015 (2015), Article ID 236014, 8 pages
http://dx.doi.org/10.1155/2015/236014
Research Article

GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing

1Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
2Nanophotonic Research Center, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

Received 5 August 2014; Revised 6 November 2014; Accepted 10 November 2014

Academic Editor: Gilles Lerondel

Copyright © 2015 Jun Hyoung Kim et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. IARC Monographs on the Evaluation of Carcinogenic Risks to Humans, vol. 23 of Some Metals and Metallic Compounds, World Health Organization, International Agency for Research on Cancer, 1998.
  2. M. Behet, R. Hövel, A. Kohl, A. Mesquida Küsters, B. Opitz, and K. Heime, “MOVPE growth of III–V compounds for optoelectronic and electronic applications,” Microelectronics Journal, vol. 27, no. 4-5, pp. 297–334, 1996. View at Publisher · View at Google Scholar · View at Scopus
  3. P. Fini, X. Wu, E. J. Tarsa et al., “The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition,” Japanese Journal of Applied Physics Part 1, vol. 37, no. 8, pp. 4460–4466, 1998. View at Publisher · View at Google Scholar · View at Scopus
  4. D. D. Koleske, A. E. Wickenden, R. L. Henry, W. J. DeSisto, and R. J. Gorman, “Growth model for GaN with comparison to structural, optical, and electrical properties,” Journal of Applied Physics, vol. 84, no. 4, pp. 1998–2010, 1998. View at Publisher · View at Google Scholar · View at Scopus
  5. P. Gibart, “Metal organic vapour phase epitaxy of GaN and lateral overgrowth,” Reports on Progress in Physics, vol. 67, no. 5, pp. 667–715, 2004. View at Publisher · View at Google Scholar · View at Scopus
  6. Y. Tanaka and K. Kobayashi, “Optical near field dressed by localized and coherent phonons,” Journal of Microscopy, vol. 229, no. 2, pp. 228–232, 2008. View at Publisher · View at Google Scholar · View at MathSciNet · View at Scopus
  7. M. Ohtsu, “Dressed photon technology,” Nanophotonics, vol. 1, pp. 83–97, 2012. View at Google Scholar
  8. M. Gershenzon and R. M. Mikulyak, “Light emission from forward biased p-n junctions in gallium phosphide,” Solid State Electronics, vol. 5, no. 5, pp. 313–329, 1962. View at Publisher · View at Google Scholar · View at Scopus
  9. D. G. Thomas, M. Gershenzon, and F. A. Trumbore, “Pair spectra and “edge” emission in gallium phosphide,” Physical Review, vol. 133, no. 1, pp. A269–A279, 1964. View at Publisher · View at Google Scholar · View at Scopus
  10. R. A. Logan, H. G. White, and W. Wiegmann, “Efficient green electroluminescent junctions in GaP,” Solid State Electronics, vol. 14, no. 1, pp. 55–70, 1971. View at Publisher · View at Google Scholar · View at Scopus
  11. J. S. Jayson, R. Z. Bachrach, P. D. Dapkus, and N. E. Schumaker, “Evaluation of the Zn-O complex and oxygen-donor electron-capture cross sections in p-Type GaP: limits on the quantum efficiency of red-emitting (Zn,O)-doped material,” Physical Review B, vol. 6, no. 6, pp. 2357–2372, 1972. View at Publisher · View at Google Scholar · View at Scopus
  12. T. Kawazoe, M. A. Mueed, and M. Ohtsu, “Highly efficient and broadband Si homojunction structured near-infrared light emitting diodes based on the phonon-assisted optical near-field process,” Applied Physics B: Lasers and Optics, vol. 104, no. 4, pp. 747–754, 2011. View at Publisher · View at Google Scholar · View at Scopus
  13. M. A. Tran, T. Kawazoe, and M. Ohtsu, “Fabrication of a bulk silicon p-n homojunction-structured light-emitting diode showing visible electroluminescence at room temperature,” Applied Physics A, vol. 115, no. 1, pp. 105–111, 2014. View at Publisher · View at Google Scholar · View at Scopus
  14. T. Kawazoe and M. Ohtsu, “Bulk crystal SiC blue LED with p-n homojunction structure fabricated by dressed-photon-phonon-assisted annealing,” Applied Physics A, vol. 115, no. 1, pp. 127–133, 2014. View at Publisher · View at Google Scholar · View at Scopus
  15. A. Einstein and P. Ehrenfest, “Zur Quantentheorie des Strahlungsgleichgewichts,” Zeitschrift für Physik, vol. 19, no. 1, pp. 301–306, 1923. View at Publisher · View at Google Scholar · View at Scopus
  16. K. Löhnert and E. Kubalek, “On the degradation of electroluminescence efficiency in gallium phosphide green light emitting diodes,” Physica Status Solidi A, vol. 80, no. 1, pp. 173–183, 1983. View at Publisher · View at Google Scholar · View at Scopus
  17. T. Kawabata and S. Koike, “High-efficiency GaP pure green light-emitting diodes of 555 nm fabricated by new liquid phase epitaxy method,” Applied Physics Letters, vol. 43, no. 5, pp. 490–491, 1983. View at Publisher · View at Google Scholar · View at Scopus
  18. K. Ždánsky, J. Zavadil, D. Nohavica, and S. Kugler, “Degradation of commercial high-brightness GaP:N green light emitting diodes,” Journal of Applied Physics, vol. 83, no. 12, pp. 7678–7684, 1998. View at Publisher · View at Google Scholar · View at Scopus
  19. M. Yamaguchi, T. Kawazoe, and M. Ohtsu, “Evaluating the coupling strength of electron-hole pairs and phonons in a 0.9 μm-wavelength silicon light emitting diode using dressed-photon-phonons,” Applied Physics A, vol. 115, no. 1, pp. 119–125, 2014. View at Publisher · View at Google Scholar · View at Scopus
  20. N. Wada, M. A. Tran, T. Kawazoe, and M. Ohtsu, “Measurement of multimode coherent phonons in nanometric spaces in a homojunction-structured silicon light emitting diode,” Applied Physics A: Materials Science and Processing, vol. 115, no. 1, pp. 113–118, 2014. View at Publisher · View at Google Scholar · View at Scopus
  21. K. Tomioka and S. Adachi, “Structural and photoluminescence properties of porous GaP formed by electrochemical etching,” Journal of Applied Physics, vol. 98, no. 7, Article ID 073511, 2005. View at Publisher · View at Google Scholar · View at Scopus