Research Article
Performance Analysis of Trench Power MOSFETs in High-Frequency Synchronous Buck Converter Applications
Table 1
Comparison of simulated and measured
electrical parameters of the basic trench power MOSFET.
| Device parameters | Basic
trench MOSFET | Modeled
(type A) | Measured
(IR6618) |
| BVDSS @250 A (V) | 36.4 | 33 | VTH @250 A (V) | 1.35 | 1.7 | @4.5 V (mΩ) | 2.3 | 3.2 | @4.5 V/15 V (nC) | 43 | 45 | @15 V (nC) | 15 | 15 | @100 A/s (nC) | 33.5 | 46 |
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