Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation
Figure 11
Blocking voltage characteristics of a 0.143 cm2 active area VJFET at gate biases of −4 V to −24 V, in steps of −2 V. At a gate-to-source bias of −24 V and a drain current density of 1 mA/cm2, the VJFET blocks 1680 V.
