Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation

Figure 15

Onstate drain current characteristics versus drain voltage characteristics of a 0.13 cm² active area low-voltage normally-off packaged VJFET. Gate biases of 0 to 3.5 V were applied, in steps of 0.5 V. At a gate bias of 2.5 V, the VJFET outputs 28 A at a forward drain voltage drop of 3.3 V.