Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation

Figure 17

Onstate drain current versus drain voltage characteristics of a 1200-V 0.143-cm² active area packaged VJFET at a gate bias range of 0 to −4.5 V, in steps of 0.5 V. At a gate-to-source bias of −4.5 V, the VJFET is pinched off and negligible current flows through its drain.