Table of Contents
International Journal of Power Management Electronics
Volume 2008, Article ID 523721, 8 pages
http://dx.doi.org/10.1155/2008/523721
Research Article

Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation

1Northrop Grumman Corporation, 1212 Winterson Road, Linthicum, MD 21090, USA
2Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA

Received 19 December 2007; Accepted 30 April 2008

Academic Editor: Peter Friedrichs

Copyright © 2008 Victor Veliadis et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. J. A. Cooper Jr., M. R. Melloch, R. Singh, A. Agarwal, and J. W. Palmour, “Status and prospects for SiC power MOSFETs,” IEEE Transactions on Electron Devices, vol. 49, no. 4, pp. 658–664, 2002. View at Publisher · View at Google Scholar
  2. S. Krishnaswami, M. Das, B. Hull et al., “Gate oxide reliability of 4H-SiC MOS devices,” in Proceedings of the 43rd Annual International Reliability Physics Symposium (IRPS '05), pp. 592–593, San Jose, Calif, USA, April 2005.
  3. A. Agarwal, S. Krishnaswami, J. Richmond et al., “Influence of basal plane dislocation induced stacking faults on the current gain in SiC BJTs,” Materials Science Forum, vol. 527–529, part 2, pp. 1409–1412, 2006. View at Google Scholar
  4. S. Krishnaswami, A. Agarwal, S.-H. Ryu et al., “1000-V, 30-A 4H-SiC BJTs with high current gain,” IEEE Electron Device Letters, vol. 26, no. 3, pp. 175–177, 2005. View at Publisher · View at Google Scholar
  5. V. Veliadis, M. McCoy, T. McNutt et al., “Fabrication of a robust high-performance floating guard ring edge termination for power silicon carbide vertical junction field effect transistors,” in Proceedings of the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH '07), pp. 217–220, Hilton Austin, Tex, USA, May 2007.
  6. V. Veliadis, L.-S. Chen, E. Stewart et al., “2.1 mO?cm2, 1.6 kV 4H-silicon carbide VJFET for power applications,” in Proceedings of the International Semiconductor Device Research Symposium (ISDRS '005), pp. 166–167, Bethesda, Md, USA, December 2005.
  7. V. Veliadis, L. S. Chen, M. McCoy et al., “High-yield silicon carbide vertical junction field effect transistor manufacturing for RF and power applications,” in Proceedings of the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH '06), pp. 219–222, Vancouver, Canada, April 2006.
  8. V. Veliadis, M. McCoy, L. S. Chen et al., “Silicon carbide vertical junction field effect transistors for RF applications: processing, DC testing, and yields,” in Proceedings of the IEEE Lester Eastman Conference on High Performance Devices, p. 77, Ithaca, NY, USA, August 2006.
  9. V. Veliadis, T. McNutt, E. Stewart, M. McCoy, H. Hearne, and C. Clarke, “Recent progress in 300C silicon carbide JFET technology for power conditioning in electric vehicles,” in Proceedings of the 7th International All Electric Combat Vehicle Conference (AECV '07), Stockholm, Sweden, June 2007, paper FCXST-07060711-545141-1.
  10. T. McNutt, V. Veliadis, E. Stewart et al., “Silicon carbide JFET cascode switch for power conditioning applications,” in Proceedings of the IEEE Vehicle Power and Propulsion Conference (VPPC '05), pp. 574–581, Chicago, Ill, USA, September 2005. View at Publisher · View at Google Scholar
  11. T. McNutt, J. Reichl, H. Hearne et al., “Demonstration of high-voltage SiC VJFET cascode in a half-bridge inverter,” Materials Science Forum, vol. 556-557, pp. 979–982, 2007. View at Google Scholar
  12. P. Friedrichs, “Charge controlled silicon carbide switching devices,” in Materials Research Society Symposium Proceedings (MRS '04), vol. 815, pp. 255–266, San Francisco, Calif, USA, May 2004, paper J3.1.
  13. H. F. Hamann, A. Weger, J. A. Lacey et al., “Hotspot-limited microprocessors: direct temperature and power distribution measurements,” IEEE Journal of Solid-State Circuits, vol. 42, no. 1, pp. 56–64, 2007. View at Publisher · View at Google Scholar
  14. R. Kelley and M. S. Mazzola, “SiC JFET gate driver design for use in DC/DC converters,” in Proceedings of the 21st Annual IEEE Applied Power Electronics Conference and Exposition (APEC '06), vol. 2006, pp. 179–182, Dallas, Tex, USA, March 2006. View at Publisher · View at Google Scholar
  15. A. B. Lostetter, Arkansas Power Electronics International Inc., private communication, 2007.
  16. B. Weis, M. Braun, and P. Friedrichs, “Turn-off and short circuit behaviour of 4H SiC JFETs,” in Proceedings of the 36th IAS Annual Meeting on Industry Applications Conference, vol. 1, pp. 365–369, Chicago, Ill, USA, September-October 2001. View at Publisher · View at Google Scholar