Research Article

Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

Table 2

Summary of interconnect data

FC–Flex

Diameter d100 μm pad /d 125 μm (ball)
Height h60 μm
Pitch p200 μm
Ratio rA=As/Achip(ε=80%)max. 20%
MaterialSoft solder
- thermal conductivity35–50 W/mK
- electrical conductivity7–10 106/Ωm
Average thermal conductivity λavmax. 7–10 W/mK
Average electrical conductivity σavmax 1.5–2 106/Ωm
Metallization layer50–150 μm Cu