Quantitative Analysis of Efficiency Improvement of a Propulsion Drive by Using SiC Devices: A Case of Study

Table 3

Si IGBT and SiC MOSFET characteristics.

Parameters	Si IGBT	SiC MOSFET
Part number	MG12100W-XN2MM	CAS100H12AM1
Manufacturer	Littelfuse	Wolfspeed
	1200 V	1200 V
	140 A @ 25°C	168 A @ 25°C
	15 V	20 V
-	8 mΩ @ 25°C	16 mΩ @ 25°C
	11.5 mΩ @ 125°C	20 mΩ @ 150°C
	0.7 V @ 25°C	—
	0.65 V @ 125°C	—
	7.8 mJ @ 600 V, 100 A	2.4 mJ @ 800 V, 100 A
	8 mJ @ 600 V, 100 A	1.3 mJ @ 800 V, 100 A
	1.65 V @ 100 A, 25°C	1.8 V @ 100 A, 25°C
	1.65 V @ 100 A, 125°C	2.5 V @ 100 A, 150°C
	4.5 mΩ @ 25°C	8.5 mΩ @ 25°C
	5.75 mΩ @ 125°C	14 mΩ @ 150°C
	16.8 C @100 A, 125°C	1.6 C @ 100 A, 25°C