Table of Contents
Chinese Journal of Engineering
Volume 2013, Article ID 738358, 8 pages
http://dx.doi.org/10.1155/2013/738358
Research Article

Analysis of Leakage Reduction Techniques in Independent-Gate DG FinFET SRAM Cell

ITM University, Gwalior, India

Received 26 June 2013; Accepted 17 July 2013

Academic Editors: L. Tan and S. Yuan

Copyright © 2013 Vandna Sikarwar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Vandna Sikarwar, Saurabh Khandelwal, and Shyam Akashe, “Analysis of Leakage Reduction Techniques in Independent-Gate DG FinFET SRAM Cell,” Chinese Journal of Engineering, vol. 2013, Article ID 738358, 8 pages, 2013. https://doi.org/10.1155/2013/738358.