Table of Contents
Conference Papers in Energy
Volume 2013 (2013), Article ID 508170, 5 pages
Conference Paper

Physical Investigations on ZnO:Ni Layers Deposited by Spray Pyrolysis

1Thin Film Laboratory, Department of Physics, Sri Venkateswara University, Tirupati 517 502, India
2School of Electrical Engineering, Tokyo University of Sciences, Noda-278-8510, Chiba, Japan

Received 4 January 2013; Accepted 26 May 2013

Academic Editors: P. Agarwal and B. Bhattacharya

This Conference Paper is based on a presentation given by M. Rajendraprasad Reddy at “International Conference on Solar Energy Photovoltaics” held from 19 December 2012 to 21 December 2012 in Bhubaneswar, India.

Copyright © 2013 M. Rajendraprasad Reddy et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Nickel-doped ZnO (ZnO:Ni) layers have been deposited on glass substrates by a spray pyrolysis method using zinc acetate and nickel sulphate as precursors. The layers were grown at different substrate temperatures, Ts, that vary in the range 250–350°C. During deposition, the precursor concentration and Ni-doping content were maintained constant at 0.1 M and 10%, respectively. The X-ray diffraction (XRD) analysis showed that all the layers were polycrystalline in nature with the (002) plane as the preferred orientation and exhibited hexagonal wurtzite structure. A sharp increment in the intensity of predominant peak with the substrate temperature was observed consistently that indicated an improvement in the crystallinity of the layers. The Raman studies confirmed the hexagonal wurtzite crystal structure of ZnO and indicated defect states. The X-ray photoelectron spectroscopy (XPS) studies revealed the characteristic peaks of the elements involved in the films and their ionic states. The optical transmittance of the films was higher than 80% and the evaluated energy band gap decreased from 3.17 eV to 3.13 eV with the increase of substrate temperature.