Table of Contents
Conference Papers in Energy
Volume 2013, Article ID 515862, 4 pages
Conference Paper

Characterization of Thermally Evaporated In2S3 Films for Solar Cell Application

Thin Film Laboratory, Department of Physics, Sri Venkateswara University, Tirupati, Andhra Pradesh 517502, India

Received 3 January 2013; Accepted 12 May 2013

Academic Editors: B. Bhattacharya and U. P. Singh

This Conference Paper is based on a presentation given by K. Ramya at “International Conference on Solar Energy Photovoltaics” held from 19 December 2012 to 21 December 2012 in Bhubaneswar, India.

Copyright © 2013 K. Ramya et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Indium sulphide (In2S3) is one of the best alternatives for CdS as a buffer layer in CuInGaSe2-based thin film heterojunction solar cells. In this work, In2S3 films were prepared by thermal evaporation of In2S3 powder onto glass substrates at different temperatures that vary from 200°C to 300°C. The as-grown films were characterized using appropriate techniques to evaluate the chemical and physical properties. The X-ray diffraction analysis revealed that all the films were polycrystalline in nature with a strong (109) plane as the preferred orientation and consisted of tetragonal and cubic phases. The crystallite size and the lattice parameters are calculated. The scanning electron micrographs indicated smooth surface with fine grains. The optical analysis revealed a high optical transmittance for the layers with a direct optical band gap that varied in the range of 1.8–2.2 eV.