Table of Contents
Conference Papers in Energy
Volume 2013, Article ID 542726, 4 pages
http://dx.doi.org/10.1155/2013/542726
Conference Paper

Possibility to Use Low Temperature Pulsed RF Sputtered Indium Tin Oxide for the Fabrication of Organic Solar Cell

Department of Physics, Jadavpur University, Kolkata 700 032, India

Received 16 December 2012; Accepted 30 April 2013

Academic Editors: B. Bhattacharya and U. P. Singh

This Conference Paper is based on a presentation given by Partha Pratim Ray at “International Conference on Solar Energy Photovoltaics” held from 19 December 2012 to 21 December 2012 in Bhubaneswar, India.

Copyright © 2013 Somnath Middya et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. I. A. Rauf, “Structure and properties of tin-doped indium oxide thin films prepared by reactive electron-beam evaporation with a zone-confining arrangement,” Journal of Applied Physics, vol. 79, no. 8, pp. 4057–4065, 1996. View at Google Scholar · View at Scopus
  2. L. Meng, J. Gao, V. Teixeira, and M. P. dos Santos, “Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents,” Physica Status Solidi (A), vol. 205, no. 8, pp. 1961–1966, 2008. View at Publisher · View at Google Scholar · View at Scopus
  3. S. H. Kim, N. M. Park, T. Kim, and G. Sung, “Electrical and optical characteristics of ITO films by pulsed laser deposition using a 10 wt.% SnO2-doped In2O3 ceramic target,” Thin Solid Films, vol. 475, no. 1-2, pp. 262–266, 2005. View at Publisher · View at Google Scholar · View at Scopus
  4. M. Sawada and M. Higuchi, “Electrical properties of ITO films prepared by tin ion implantation in In2O3 film,” Thin Solid Films, vol. 317, no. 1-2, pp. 157–160, 1998. View at Google Scholar · View at Scopus
  5. H. C. Lee and O. O. Park, “Behaviors of carrier concentrations and mobilities in indium-tin oxide thin films by DC magnetron sputtering at various oxygen flow rates,” Vacuum, vol. 77, no. 1, pp. 69–77, 2004. View at Publisher · View at Google Scholar · View at Scopus
  6. M. Buchanan, J. B. Webb, and D. F. Williams, “The influence of target oxidation and growth-related effects on the electrical properties of reactively sputtered films of tin-doped indium oxide,” Thin Solid Films, vol. 80, no. 4, pp. 373–382, 1981. View at Google Scholar · View at Scopus
  7. M. Mehra and H. Rhodesm, “Properties of indium tin oxide films prepared using reactive RF magnetron sputtering,” Materials Research Society Symposium Proceedings, vol. 70, pp. 569–574, 1986. View at Publisher · View at Google Scholar
  8. R. Mientus and K. Ellmer, “Reactive magnetron sputtering of tin-doped indium oxide (ITO): influence of argon pressure and plasma excitation mode,” Surface and Coatings Technology, vol. 142–144, pp. 748–754, 2001. View at Publisher · View at Google Scholar · View at Scopus
  9. Y. S. Kim, Y. C. Park, S. G. Ansari, J. Y. Lee, B. S. Lee, and H. S. Shin, “Influence of O2 admixture and sputtering pressure on the properties of ITO thin films deposited on PET substrate using RF reactive magnetron sputtering,” Surface and Coatings Technology, vol. 173, no. 2-3, pp. 299–308, 2003. View at Publisher · View at Google Scholar · View at Scopus