Table of Contents
Conference Papers in Energy
Volume 2013, Article ID 718692, 7 pages
Conference Paper

ZnO Thin Film Deposition for TCO Application in Solar Cell

Facilitation Centre for Industrial Plasma Technologies (FCIPT), Institute for Plasma Research (IPR), Gandhinagar Plot No. A-10/B, Electronic Estate, GIDC, Sector 25, Gandhinagar, Gujarat 382044, India

Received 5 January 2013; Accepted 3 April 2013

Academic Editors: P. Agarwal, B. Bhattacharya, U. P. Singh, and B. Sopori

This Conference Paper is based on a presentation given by S. Agrawal at “International Conference on Solar Energy Photovoltaics” held from 19 December 2012 to 21 December 2012 in Bhubaneswar, India.

Copyright © 2013 S. Agrawal et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


ZnO is a well-known suitable candidate for the Transparent Conducting Oxide (TCO) layer of thin film compound solar cells. In this paper we have discussed the deposition of ZnO thin film on glass substrate by reactive DC magnetron sputtering using oxygen as a reactive gas. Samples are prepared by varying oxygen flow rates during the deposition process. After deposition, samples are annealed at 300°C for 2 hours in vacuum environment. All the properties of the film are measured before and after annealing. All the samples are tested for the optical transparency, band gap, and electrical resistivity before and after annealing. Band gap of film is observed to be 3.2 eV. XRD and SEM measurements of the samples show the variation in the crystal structure and surface morphology of the film with varying oxygen flow rate and annealing also. Around 600 nm thick ZnO film with  Ω·cm resistivity and 80% transparency without any doping is achieved.