Table of Contents
Conference Papers in Energy
Volume 2013, Article ID 739532, 3 pages
Conference Paper

Synthesis of CIS Nanoink and Its Absorber Layer without Selenization

Centre for Nanotechnology, BHEL Corporate R&D, Vikasnagar, Hyderabad 500093, India

Received 1 January 2013; Accepted 3 April 2013

Academic Editors: P. Agarwal, B. Bhattacharya, U. P. Singh, and B. Sopori

This Conference Paper is based on a presentation given by Manoj Kumar at “International Conference on Solar Energy Photovoltaics” held from 19 December 2012 to 21 December 2012 in Bhubaneswar, India.

Copyright © 2013 Manoj Kumar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Highly crystalline CIS nanoink was synthesized using highly efficient microwave route. Thin films of CIS were fabricated using the developed ink by drop casting method. XRD pattern of CIS thin films indicates that a chalcopyrite phase with good crystallinity can be obtained using developed ink and that the composition of precursor ink can be transferred directly to the thin film without change in the stoichiometry. The developed ink alleviates the need of organic binders/dispersant and high temperature selenization using highly toxic H2Se gas (or Na2Se as a Se source) after deposition of thin film absorber layer. UV-VIS-NIR absorption analysis indicates that CIS thin film has a band gap of around 1.18 eV.