Raman and FTIR Studies on PECVD Grown Ammonia-Free Amorphous Silicon Nitride Thin Films for Solar Cell Applications

Table 1

Process Parameters of deposition of a-SiN_𝑥:H films.

Sample number	SiH4 (sccm)	N2 (sccm)	Deposition time (min.)
SiN A	5	2000	12
SiN B	5	1900	12
SiN C	5	1800	12
SiN D	5	1700	12
SiN E	5	1600	12