NO<sub>2</sub> Sensing Properties of WO<sub>3</sub> Thin Films Deposited by Rf-Magnetron Sputtering

<table class="table-group" id="tab1"><tr><td><table class="table"><tr><td class="thead-hr" colspan="2"><hr/></td></tr><tr><td align="left">Target</td><td align="center">W metal target (99.999% pure)</td></tr><tr><td align="left">Substrate</td><td align="center">IDE/corning glass; corning glass</td></tr><tr><td align="left">Target to substrate distance</td><td align="center">6 cm</td></tr><tr><td align="left">Sputtering pressure</td><td align="center">10 mT</td></tr><tr><td align="left">RF power</td><td align="center">50 Watt</td></tr><tr><td align="left">Gas composition (Ar : O<sub>2</sub>)</td><td align="center">60 : 40</td></tr><tr class="table-tr"><td colspan="2"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

Deposition parameters for WO<sub>3</sub> thin film using Rf magnetron sputtering.

Conference Papers in Science

tab1

Table 1

Table 1: NO<sub>2</sub> Sensing Properties of WO<sub>3</sub> Thin Films Deposited by Rf-Magnetron Sputtering 

Conference Papers in Science

NO2 Sensing Properties of WO3 Thin Films Deposited by Rf-Magnetron Sputtering

Table 1

NO₂ Sensing Properties of WO₃ Thin Films Deposited by Rf-Magnetron Sputtering