A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency

<div>(a) An AFM image and (b) the corresponding height profile of CVD-grown WSe2. (c) The Raman spectra of WSe2 before and after transfer. (d) Reflectance measurements of n-type Si, WSe2/n-type Si, and Al2O3/WSe2/n-type Si.</div>

International Journal of Energy Research

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Figure 3

Figure 3: A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency 

Figure 3 | A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency 