A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency

Table 1

Comparison of the photovoltaic parameters of WSe₂-based solar cells.

Reference	Device structure	Applied strategy	Active area (cm^2)	(V)	(mA/cm^2)	Fill factor (%)	PCE (%)
[43]	ZnO/WSe2/Mo	WSe2/ZnO p-n junction	0.09	0.082	2.98	32	0.79
[44]	WSe2/WS2	van der Waals heterojunction		0.58	—	36	2.4
[45]	WSe2/n-type Si	Nanosheet synthesize	0.04	0.34	1.55	55	2.91
[3]	WSe2/Pt	—		0.28	2.11	49	0.96
	Al2O3/WSe2/Pt	Reflectance layers		0.36	2.43	58	1.7
This work	WSe2/n-type Si	—	0.36	0.25	9.25	47	1.08
	Al2O3/WSe2/n-type Si	Reflectance layers		0.66	19.12	50	6.39

V_oc: open-circuit voltage; J_sc: short-circuit current; PCE: power conversion efficiency.