Table of Contents
Indian Journal of Materials Science
Volume 2013 (2013), Article ID 465905, 5 pages
Research Article

60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs

1Instrumentation Department, Uniphos Envirotronic Pvt. Ltd., Vapi 396195, India
2Department of Electrical Engineering, Indian Institute of Technology, Mandi 175001, India
3Department of Studies in Physics, Kuvempu University, Shankaraghatta 577451, India
4Department of Physics, Mangalore University, Mangalore 574199, India
5Department of Physics, Bengaluru University, Bengaluru 560056, India

Received 25 June 2013; Accepted 28 August 2013

Academic Editors: D. S. Patil and D. Sinha

Copyright © 2013 Shashank Nagaraj et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Shashank Nagaraj, Vikram Singh, Halepoojar Siddalingappa Jayanna, Kagalagodu Manjunathiah Balakrishna, and Ramakrishna Damle, “60Co-Gamma Ray Induced Total Dose Effects on P-Channel MOSFETs,” Indian Journal of Materials Science, vol. 2013, Article ID 465905, 5 pages, 2013. doi:10.1155/2013/465905