Table of Contents
Indian Journal of Materials Science
Volume 2013 (2013), Article ID 684730, 7 pages
Research Article

Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films

1Department of Science and Humanities, Vignan University, Vadlamudi, Andhra Pradesh 522 213, India
2Postgraduate Department of Physics and Electronics, P.B. Siddhartha College of Arts and Science, Vijayawada, Andhra Pradesh 520 010, India
3Laboratory for Condensed Matter Physics, Satyendra Nath Bose National Centre for Basic Sciences, Salt Lake, Kolkata 700 098, India

Received 17 June 2013; Accepted 31 July 2013

Academic Editors: K. Kalantar-Zadeh and H. Leiste

Copyright © 2013 K. Srinivasarao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The ZnO and Mo:ZnO thin films were deposited by radio frequency magnetron sputtering on quartz and intrinsic silicon (100) substrates at a fixed combined partial pressure  mbar of Ar + O2 and substrate temperatures of 473 K and 673 K. The effect of Molybdenum doping on ZnO thin films with different Molybdenum concentrations (1-2 atomic percent) was studied with the help of structural and microstructural characterization techniques. The films deposited at a substrate temperature of 473 K exhibited strong c-axis orientation with predominant (002) peak. At 673 K, along with (002) orientation, other orientations (100), (101), (220), and (103) were also observed. Among these, the (220) peak indicates the cubic phase of ZnO. With increasing Molybdenum concentration, the cubic phase of ZnO disappeared, and the (002) orientation became strong and intense. The composition analysis reveals that the undoped ZnO films deposited at 473 K have oxygen deficiency, and the ratio of Zn/O is improved with increasing Mo atomic percent in ZnO. The surface morphological features reveal that the undoped ZnO films were found to be uniform and have grain size of around 30 nm. The optical energy gap of the undoped ZnO films is 3.05 eV and increases with increasing Mo concentration. The thickness of the films is around 456 nm.