Table of Contents
International Journal of Microwave Science and Technology
Volume 2007 (2007), Article ID 47927, 8 pages
http://dx.doi.org/10.1155/2007/47927
Research Article

An Integrated 5 GHz Wideband Quadrature Modem for OFDM Gbit/s Transmission in SiGe:C BiCMOS

IHP-microelectronics, Im Technoloiepark 25, Frankfurt D-15236, Germany

Received 25 January 2007; Revised 23 April 2007; Accepted 3 August 2007

Academic Editor: Kenjiro Nishikawa

Copyright © 2007 Klaus Schmalz et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. E. Grass, F. Herzel, M. Piz, Y. Sun, and R. Kraemer, “Implementation aspects of Gbit/s communication system for 60 GHz band,” in Proceedings of the 14th Wireless World Research Forum (WWRF '05), San Diego, Calif, USA, July 2005.
  2. B. Heinemann, H. Rücker, R. Barth et al., “Novel collector design for high-speed SiGe:C HBTs,” in Proceedings of IEEE International Electron Devices Meeting (IEDM '02), pp. 775–778, San Francisco, Calif, USA, December 2002. View at Publisher · View at Google Scholar
  3. C. Meng, T.-H. Wu, T.-H. Wu, and G.-W. Huang, “A fully integrated 5.2 GHz double quadrature image rejection Gilbert downconverter using 0.35 μm SiGe HBT technology,” in Proceedings of the 12th Gallium Arsenide Applications Symposium (GAAS '04), pp. 319–322, Amsterdam, The Netherlands, October 2004.
  4. K. Nakajima, N. Suematsu, K. Murakami et al., “A 5GHz-band SiGe-MMIC quadrature modulator using a circular polyphase filter for 1Gbps transmission,” in Proceedings of the 35th European Microwave Conference (EuMC '05), vol. 2, pp. 979–982, Paris, France, October 2005. View at Publisher · View at Google Scholar
  5. E. Tiiliharju and K. Halonen, “A 0.75-3.6GHz SiGe direct-conversion quadrature-modulator,” in Proceedings of the 29th European Solid-State Circuits Conference (ESSCIRC '03), pp. 565–568, Estoril, Portugal, September 2003. View at Publisher · View at Google Scholar
  6. S. Cipriani, L. Carpineto, B. Bisanti et al., “Fully integrated zero IF transceiver for GPRS/GSM/DCS/PCS application,” in Proceedings of the 28th European Solid-State Circuits Conference (ESSCIRC '02), pp. 439–442, Florence, Italy, September 2002.
  7. F. Herzel, W. Winkler, and J. Borngräber, “An integrated 10 GHz quadrature LC-VCO in SiGe:C BiCMOS technology for low-jitter applications,” in Proceedings of the IEEE Custom Integrated Circuits Conference (CICC '03), pp. 293–296, San Jose, Calif, USA, September 2003. View at Publisher · View at Google Scholar
  8. K. Schmalz, F. Herzel, and M. Piz, “An integrated 5 GHz wideband quadrature modem in SiGe:C BiCMOS technology,” in Proceedings of the 36th European Microwave Conference (EuMC '06), pp. 1565–1659, Manchester, UK, September 2006. View at Publisher · View at Google Scholar
  9. F. Herzel and W. Winkler, “A 2.5-GHz eight-phase VCO in SiGe BiCMOS technology,” IEEE Transactions on Circuits and Systems II, vol. 52, no. 3, pp. 140–144, 2005. View at Publisher · View at Google Scholar
  10. F. Herzel, G. Fischer, and H. Gustat, “An integrated CMOS RF synthesizer for 802.11a wireless LAN,” IEEE Journal of Solid-State Circuits, vol. 38, no. 10, pp. 1767–1770, 2003. View at Publisher · View at Google Scholar
  11. W. Simburger, H. Knapp, and P. Weger, “Characterization of a microwave silicon single-chip direct conversion RF transceiver,” in Proceedings of the 25th European Microwave Conference (EuMC '95), vol. 2, pp. 646–657, Bologna, Italy, September 1995.
  12. K. Schmalz, M. A. Teplechuk, and J. I. Sewell, “A class AB 6th order log-domain filter in BiCMOS with 100-500 MHz tuning range,” in Proceedings of the European Conference on Circuit Theory and Design (ECCTD '05), vol. 2, pp. 111–114, Cork, Ireland, August-September 2005. View at Publisher · View at Google Scholar
  13. H. Rücker, B. Heinemann, R. Barth et al., “SiGe:C BiCMOS technology with 3.6 ps gate delay,” in IEEE International Electron Devices Meeting Technical Digest (IEDM '03), pp. 5.3.1–5.3.4, December 2003. View at Publisher · View at Google Scholar