Table of Contents
International Journal of Microwave Science and Technology
Volume 2010, Article ID 980957, 8 pages
http://dx.doi.org/10.1155/2010/980957
Research Article

Noise-Cancelling CMOS Active Inductor and Its Application in RF Band-Pass Filter Design

Sexton Campus, Dalhousie University, 1360 Barrington Street, Halifax, NS B3J 1Z1, Canada

Received 6 August 2009; Revised 21 October 2009; Accepted 4 January 2010

Academic Editor: Liang-Hung Lu

Copyright © 2010 Santosh Vema Krishnamurthy et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A CMOS active inductor with thermal noise cancelling is proposed. The noise of the transistor in the feed-forward stage of the proposed architecture is cancelled by using a feedback stage with a degeneration resistor to reduce the noise contribution to the input. Simulation results using 90 nm CMOS process show that noise reduction by 80% has been achieved. The maximum resonant frequency and the quality factor obtained are 3.8 GHz and 405, respectively. An RF band-pass filter has been designed based on the proposed noise cancelling active inductor. Tuned at 3.46 GHz, the filter features total power consumption of 1.4 mW, low noise figure of 5 dB, and IIP3 of −10.29 dBm.