Scalable RFCMOS Model for 90 nm Technology

<table>Measured and simulated results for NMOS transistor with <svg height="18.362499" id="M241" style="vertical-align:-5.76988pt" version="1.1" viewbox="0 0 23.237499 18.362499" width="23.237499" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,14.925,15.188)"><path d="M619 670q0 -13 -9 -26t-18 -19q-13 -10 -25 2q-36 38 -66 38q-31 0 -54.5 -50t-45.5 -185h120l-20 -31l-107 -12q-23 -138 -57 -293q-27 -122 -55 -184.5t-75 -109.5q-60 -61 -114 -61q-25 0 -47.5 15t-22.5 31q0 17 31 44q11 8 20 -1q10 -11 31 -19t35 -8q26 0 47 19
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</svg> of 24, <svg height="18.362499" id="M242" style="vertical-align:-5.76988pt" version="1.1" viewbox="0 0 25.6625 18.362499" width="25.6625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.113)"><path d="M1004 650l-6 -29q-54 -6 -71 -19.5t-51 -74.5l-271 -539h-33l-98 506h-3l-258 -506h-30l-78 532q-10 67 -21.5 80t-66.5 21l6 29h241l-8 -29l-26 -5q-34 -6 -41 -16t-3 -47l59 -425h4l251 510h31l102 -510h2q150 299 198 423q14 40 8.5 48.5t-47.5 16.5l-28 5l7 29h231z
" id="x1D44A"></path></g>
<g transform="matrix(.012,-0,0,-.012,17.338,15.188)"><path d="M619 670q0 -13 -9 -26t-18 -19q-13 -10 -25 2q-36 38 -66 38q-31 0 -54.5 -50t-45.5 -185h120l-20 -31l-107 -12q-23 -138 -57 -293q-27 -122 -55 -184.5t-75 -109.5q-60 -61 -114 -61q-25 0 -47.5 15t-22.5 31q0 17 31 44q11 8 20 -1q10 -11 31 -19t35 -8q26 0 47 19
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</svg> of 5 <i>μ</i>m, and <svg height="18.362499" id="M243" style="vertical-align:-5.76988pt" version="1.1" viewbox="0 0 17.225 18.362499" width="17.225" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.113)"><path d="M559 163q-23 -66 -68 -163h-474l6 26q62 4 79.5 19.5t28.5 75.5l78 409q7 35 8.5 49t-8 25t-24 13t-51.5 5l5 28h266l-6 -28q-65 -5 -79.5 -18t-25.5 -74l-76 -406q-10 -57 14 -75q12 -13 96 -13q93 0 126 29q41 40 76 109z" id="x1D43F"></path></g>
<g transform="matrix(.012,-0,0,-.012,9.763,15.188)"><path d="M546 430q-14 -33 -37.5 -140t-38.5 -209q-29 -195 -156 -289q-29 -21 -70 -37t-78 -16q-62 0 -102.5 37t-40.5 69q0 27 26 48q19 15 25 -3q13 -43 46.5 -69t87.5 -26q55 0 83 21q29 22 50 65t43 140q14 64 29 163h-2q-55 -81 -149 -152q-59 -44 -102 -44q-23 0 -43.5 30
t-20.5 85q0 74 32.5 145.5t84.5 117.5q40 35 100 58.5t117 23.5q21 0 65 -8q30 -6 44 -6zM456 386q-40 16 -81 16q-29 0 -64 -13q-42 -17 -85 -97q-19 -36 -31.5 -86t-12.5 -86q0 -64 30 -64q20 0 52.5 21t60.5 52q74 81 95 123q26 62 36 134z" id="x1D454"></path></g>
</svg> of 70 nm.</table>

International Journal of Microwave Science and Technology

Scalable RFCMOS Model for 90 nm Technology

Figure 18