International Journal of Microwave Science and Technology / 2011 / Article / Fig 20

Research Article

Scalable RFCMOS Model for 90 nm Technology

Figure 20

Model continuity for and for NMOSFETs with different and of 1 μm at  V and  V (a), with different and of 2.5 μm at  V and  V (b), and with different and of 5 μm at  V and  V (c).
452348.fig.0020a
(a)
452348.fig.0020b
(b)
452348.fig.0020c
(c)

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