Table of Contents
International Journal of Microwave Science and Technology
Volume 2011, Article ID 945189, 4 pages
Research Article

Temperature Dependence of GaN HEMT Small Signal Parameters

1Electronics Engineering Department, The American University in Cairo, AUC Avenue, New Cairo 11835, Egypt
2RF Electronics Branch, US Army Research Laboratory, 2800 Powder Mill Road., Adelphi, MD 20783, USA

Received 12 August 2011; Revised 30 November 2011; Accepted 9 December 2011

Academic Editor: Ichihiko Toyoda

Copyright © 2011 Ali M. Darwish et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0–150°C range. The changes with temperature for transconductance ( 𝑔 m ), output impedance ( 𝐶 d s and 𝑅 d s ), feedback capacitance ( 𝐶 d g ), input capacitance ( 𝐶 g s ), and gate resistance ( 𝑅 g ) are measured. The variations with temperature are established for 𝑔 m , 𝐶 d s , 𝑅 d s , 𝐶 d g , 𝐶 g s , and 𝑅 g in the GaN technology. This information is useful for MMIC designs.