Table of Contents
International Journal of Microwave Science and Technology
Volume 2011, Article ID 945189, 4 pages
http://dx.doi.org/10.1155/2011/945189
Research Article

Temperature Dependence of GaN HEMT Small Signal Parameters

1Electronics Engineering Department, The American University in Cairo, AUC Avenue, New Cairo 11835, Egypt
2RF Electronics Branch, US Army Research Laboratory, 2800 Powder Mill Road., Adelphi, MD 20783, USA

Received 12 August 2011; Revised 30 November 2011; Accepted 9 December 2011

Academic Editor: Ichihiko Toyoda

Copyright © 2011 Ali M. Darwish et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Ali M. Darwish, Amr A. Ibrahim, and H. Alfred Hung, “Temperature Dependence of GaN HEMT Small Signal Parameters,” International Journal of Microwave Science and Technology, vol. 2011, Article ID 945189, 4 pages, 2011. https://doi.org/10.1155/2011/945189.