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International Journal of Microwave Science and Technology
Volume 2012 (2012), Article ID 418264, 5 pages
Research Article

Copper-Metalized GaAs pHEMT with Cu/Ge Ohmic Contacts

1Microelectronics Department, Research and Production Company “Micran”, 47 Vershinina Street, Tomsk 634045, Russia
2RF Electronics Department, Submicron Technologies, 8 Akademicheskiy Avenue, Tomsk 634021, Russia

Received 29 November 2010; Accepted 1 March 2011

Academic Editor: Rüdiger Quay

Copyright © 2012 E. V. Anichenko et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

E. V. Anichenko, V. S. Arykov, E. V. Erofeev, and V. A. Kagadei, “Copper-Metalized GaAs pHEMT with Cu/Ge Ohmic Contacts,” International Journal of Microwave Science and Technology, vol. 2012, Article ID 418264, 5 pages, 2012. doi:10.1155/2012/418264