Table of Contents
International Journal of Microwave Science and Technology
Volume 2016, Article ID 4370345, 9 pages
Research Article

Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency

Electron Devices Group, School of Physics, Sambalpur University, Jyoti Vihar, Burla, Sambalpur, Odisha 768019, India

Received 9 September 2015; Accepted 11 January 2016

Academic Editor: Salvador Sales Maicas

Copyright © 2016 Pranati Panda et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The potentials of GaN, SiC, and Si for application as microwave sources in mixed tunnelling avalanche transit time mode operation at submillimetre wave (sub-mm wave) frequency around 0.35 terahertz (THz) are investigated using some computer simulation methods. Design criteria to choose width, doping concentration, and area are highlighted. From the results of our simulation we observed that the Si diode produces the least power output of 41 mW followed by the GaN diode with 760 mW and the SiC diode with 2.89 W. In addition, the GaN diode has more noise than the SiC diode (by 5 dB) as well as the Si diode (by 10 dB). The drastically different performance between the GaN and the SiC diode is attributed to the incorporation of disparate carrier velocity in GaN which were not being used by other authors. In spite of the low power and high noise of the GaN compared to the SiC diode, the presence of several peaks in the mean square noise voltage curves and the existence of several minima in the noise measure curves would open a new direction in the design of GaN low-noise ATT diodes capable of multifrequency tuning like a DAR diode.