Plasma-Induced Damage on the Reliability of Hf-Based High-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>k</mml:mi></mml:math>/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

Weng, Wu-Te; Lee, Yao-Jen; Lin, Horng-Chih; Huang, Tiao-Yuan

doi:https://doi.org/10.1155/2009/308949

International Journal of Plasma Science and Engineering

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Research Article | Open Access

Volume 2009 | Article ID 308949 | https://doi.org/10.1155/2009/308949

Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

Wu-Te Weng,¹Yao-Jen Lee,²Horng-Chih Lin,^1,2and Tiao-Yuan Huang¹

Academic Editor: Paul K. Chu

Received15 Apr 2009

Revised23 Jul 2009

Accepted30 Sept 2009

Published14 Dec 2009

Abstract

This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO2/poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

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Copyright © 2009 Wu-Te Weng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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