Table of Contents
International Journal of Plasma Science and Engineering
Volume 2009, Article ID 308949, 10 pages
http://dx.doi.org/10.1155/2009/308949
Research Article

Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

1Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan
2National Nano Device Laboratories, Science-Based Industrial Park, 26 Prosperity Road 1, Hsinchu 30078, Taiwan

Received 15 April 2009; Revised 23 July 2009; Accepted 30 September 2009

Academic Editor: Paul K. Chu

Copyright © 2009 Wu-Te Weng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • K. Shubhakar, S. Mei, M. Bosman, N. Raghavan, A. Ranjan, S.J. O'Shea, and K.L. Pey, “Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight,” Microelectronics Reliability, 2016. View at Publisher · View at Google Scholar
  • S. Zimmermann, M. Haase, N. Lang, J. Röpcke, S.E. Schulz, and T. Otto, “The role of plasma analytics in leading-edge semiconductor technologies,” Contributions to Plasma Physics, 2018. View at Publisher · View at Google Scholar