International Journal of Plasma Science and Engineering

Volume 2009 (2009), Article ID 308949, 10 pages

http://dx.doi.org/10.1155/2009/308949

Research Article

## Plasma-Induced Damage on the Reliability of Hf-Based High-k /Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

^{1}Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan^{2}National Nano Device Laboratories, Science-Based Industrial Park, 26 Prosperity Road 1, Hsinchu 30078, Taiwan

Received 15 April 2009; Revised 23 July 2009; Accepted 30 September 2009

Academic Editor: Paul K. Chu

Copyright © 2009 Wu-Te Weng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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