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International Journal of Spectroscopy
Volume 2009, Article ID 439065, 6 pages
http://dx.doi.org/10.1155/2009/439065
Research Article

X-Ray Photoemission Study of the Oxidation of Hafnium

1Department of Physics, Texas A&M University-Commerce, Commerce, TX 75429, USA
28416 FM 904, Pecan Gap, TX 75469, USA

Received 6 August 2008; Accepted 18 October 2008

Academic Editor: Jin Zhang

Copyright © 2009 A. R. Chourasia et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. F. Lime, K. Oshima, M. Cassé et al., “Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric,” Solid-State Electronics, vol. 47, no. 10, pp. 1617–1621, 2003. View at Publisher · View at Google Scholar
  2. A. Deshpande, R. Inman, G. Jursich, and C. Takoudis, “Characterization of hafnium oxide grown on silicon by atomic layer deposition: interface structure,” Microelectronic Engineering, vol. 83, no. 3, pp. 547–552, 2006. View at Publisher · View at Google Scholar
  3. G. D. Wilk, R. M. Wallace, and J. M. Anthony, “High-κ gate dielectrics: current status and materials properties considerations,” Journal of Applied Physics, vol. 89, no. 10, pp. 5243–5275, 2001. View at Publisher · View at Google Scholar
  4. S.-W. Nam, J.-H. Yoo, S. Nam et al., “Influence of annealing condition on the properties of sputtered hafnium oxide,” Journal of Non-Crystalline Solids, vol. 303, no. 1, pp. 139–143, 2002. View at Publisher · View at Google Scholar
  5. C. J. Först, C. R. Ashman, K. Schwarz, and P. E. Blöchl, “The interface between silicon and a high-k oxide,” Nature, vol. 427, no. 6969, pp. 53–56, 2004. View at Publisher · View at Google Scholar
  6. V. Sammelselg, R. Rammula, J. Aarik, A. Kikas, K. Kooser, and T. Käämbre, “XPS and AFM investigation of hafnium dioxide thin films prepared by atomic layer deposition on silicon,” Journal of Electron Spectroscopy and Related Phenomena, vol. 156–158, pp. 150–154, 2007. View at Publisher · View at Google Scholar
  7. S. Lee and D.-L. Kwong, “Dual poly-Si gate metal oxide semiconductor field effect transistors fabricated with high-quality chemical vapor deposition HfO2 gate dielectrics,” Japanese Journal of Applied Physics, vol. 42, no. 12, pp. 7256–7258, 2003. View at Google Scholar
  8. S. Nam, S.-W. Nam, J.-H. Yoo, and D.-H. Ko, “Interface control by modified sputtering on Pt/HfO2/Si system,” Materials Science and Engineering B, vol. 102, no. 1–3, pp. 123–127, 2003. View at Publisher · View at Google Scholar
  9. T. P. Smirnova, L. V. Yakovkina, V. N. Kitchai et al., “Chemical vapor deposition and characterization of hafnium oxide films,” Journal of Physics and Chemistry of Solids, vol. 69, no. 2-3, pp. 685–687, 2008. View at Publisher · View at Google Scholar
  10. D. Weier, C. Flüchter, A. de Siervo et al., “Photoelectron spectroscopy (XPS) and photoelectron diffraction (XPD) studies on the system hafnium silicide and hafnium oxide on Si(1 0 0),” Materials Science in Semiconductor Processing, vol. 9, no. 6, pp. 1055–1060, 2006. View at Publisher · View at Google Scholar
  11. S. Xing, N. Zhang, Z. Song, Q. Shen, and C. Lin, “Preparation of hafnium oxide thin film by electron beam evaporation of hafnium incorporating a post thermal process,” Microelectronic Engineering, vol. 66, no. 1–4, pp. 451–456, 2003. View at Publisher · View at Google Scholar
  12. S. Suzer, S. Sayan, M. M. B. Holl, E. Garfunkel, Z. Hussain, and N. M. Hamdan, “Soft X-ray photoemission studies of Hf oxidation,” Journal of Vacuum Science and Technology A, vol. 21, no. 1, pp. 106–109, 2003. View at Publisher · View at Google Scholar
  13. C. Morant, L. Galán, and J. M. Sanz, “An XPS study of the initial stages of oxidation of hafnium,” Surface and Interface Analysis, vol. 16, no. 1–12, pp. 304–308, 1990. View at Publisher · View at Google Scholar
  14. N. Ohtsu, B. Tsuchiya, M. Oku, T. Shikama, and K. Wagatsuma, “X-ray photoelectron spectroscopic study on initial oxidation of hafnium hydride fractured in an ultra-high vacuum,” Applied Surface Science, vol. 253, no. 16, pp. 6844–6847, 2007. View at Publisher · View at Google Scholar
  15. A. R. Chourasia and R. L. Miller, “Auger parameter of hafnium in elemental hafnium and in hafnium oxide,” Surface Science, vol. 573, no. 2, pp. 320–326, 2004. View at Publisher · View at Google Scholar