International Journal of Spectroscopy / 2011 / Article / Fig 3

Research Article

Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

Figure 3

Polarization PL spectra at 10 K and degree of linear polarization for the InAs capped by GaAs sample (a) and InGaAs sample (b).
527642.fig.003a
(a)
527642.fig.003b
(b)

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