Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy
Figure 15
Si–H LVM for various Si films; (a) spectrum of a–Si:H deposited by PECVD, (b) spectrum of hydrogenated ELC poly-Si, (c) spectrum of cat-CVD nanocrystalline Si, and (d) spectrum of the ELC poly-Si irradiated with O2 plasma followed by hydrogenation.
