Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy

<table>The variation of the crystal fraction in Si film with SPC time; the heating was performed at 580°C. The volume fraction of crystal was estimated by spectroscopic ellipsometry. The intensity fraction of crystal components of the OPM in Raman spectra,  <svg height="16.4125" id="M72" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 76.262497 16.4125" width="76.262497" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,12.138)"><path d="M414 650l-6 -28q-63 -4 -78.5 -17.5t-27.5 -71.5l-77 -416q-11 -58 0.5 -71.5t77.5 -17.5l-5 -28h-275l8 28q63 4 79.5 18.5t27.5 70.5l80 416q11 57 -2 71t-81 18l6 28h273z" id="x1D43C"></path></g>
<g transform="matrix(.012,-0,0,-.012,7.487,16.212)"><path d="M383 397q0 -32 -35 -49q-12 -6 -23 8q-37 45 -84 45t-90 -71q-40 -65 -40 -167q0 -57 22 -86t59 -29q38 0 81.5 24.5t69.5 51.5l16 -21q-44 -53 -104 -84t-109 -31q-56 0 -89.5 41t-33.5 117q0 61 30 124t79 105q33 28 81 50.5t86 22.5q34 0 59 -15.5t25 -35.5z" id="x1D450"></path></g>
<g transform="matrix(.017,-0,0,-.017,12.95,12.138)"><path d="M368 703l-264 -866h-60l265 866h59z" id="x2F"></path></g><g transform="matrix(.017,-0,0,-.017,19.953,12.138)"><path d="M300 -147l-18 -23q-106 71 -159 185.5t-53 254.5v1q0 139 53 252.5t159 186.5l18 -24q-74 -62 -115.5 -173.5t-41.5 -242.5q0 -130 41.5 -242.5t115.5 -174.5z" id="x28"></path></g><g transform="matrix(.017,-0,0,-.017,25.835,12.138)"><path d="M414 650l-6 -28q-63 -4 -78.5 -17.5t-27.5 -71.5l-77 -416q-11 -58 0.5 -71.5t77.5 -17.5l-5 -28h-275l8 28q63 4 79.5 18.5t27.5 70.5l80 416q11 57 -2 71t-81 18l6 28h273z" id="x1D43C"></path></g>
<g transform="matrix(.012,-0,0,-.012,33.262,16.212)"><path d="M483 97q-42 -50 -88.5 -79.5t-68.5 -29.5q-37 0 -17 93l22 102h-2q-54 -79 -144 -149q-59 -46 -100 -46q-24 0 -43 29t-19 86q0 78 34.5 153t94.5 120q41 31 94 51.5t98 20.5q29 0 72 -9q26 -6 39 -6l2 -4q-30 -117 -67 -323q-8 -41 2 -41q16 0 79 58zM374 387
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<g transform="matrix(.012,-0,0,-.012,64.862,16.212)"><path d="M383 397q0 -32 -35 -49q-12 -6 -23 8q-37 45 -84 45t-90 -71q-40 -65 -40 -167q0 -57 22 -86t59 -29q38 0 81.5 24.5t69.5 51.5l16 -21q-44 -53 -104 -84t-109 -31q-56 0 -89.5 41t-33.5 117q0 61 30 124t79 105q33 28 81 50.5t86 22.5q34 0 59 -15.5t25 -35.5z" id="x1D450"></path></g>
<g transform="matrix(.017,-0,0,-.017,70.312,12.138)"><path d="M275 270q0 -296 -211 -440l-19 23q75 62 116.5 174t41.5 243t-42 243t-116 173l19 24q211 -144 211 -440z" id="x29"></path></g>
</svg>, is also plotted.</table>

International Journal of Spectroscopy

fig18

Figure 18

Figure 18: Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy 