Characterization of Defects and Stress in Polycrystalline Silicon Thin Films on Glass Substrates by Raman Microscopy

Figure 8

Variation of the OPM intensity for Si{100}, Si{110}, and Si{111} with a rotational angle, 𝜓_𝑖, of the incident polarized light. The open circles and closed circles are plots for 𝜓_𝑠=0^∘ and 90°, respectively.

(a) C–Si{100}

(b) C–Si{110}

(c) C–Si{111}

(d) CLC poly-Si