Spin Flows in Magnetic Semiconductor/Insulator/Superconductor Tunneling Junction

Figure 1

Densities of states (DOSs) calculated for As magnetic semiconductor with . The electron configuration used in the spin-polarized self-consistent-field (SP-SCF) atomic structure calculation for Mn atom is with , that for Ga atom is , and that for As atom is . (a), (b), (c), (d), (e), (f), (g), (h), (i), (j), and (k) are the results calculated for , (), (), (), (), (), (), (), (), (), and (), respectively. Magnetic moment calculated per Mn atom is , , , , , , , , , and for (b), (c), (d), (e), (f), (g), (h), (i), (j), and (k), respectively. Present results show that (a) is a nonmagnetic semiconductor, (b) is a ferromagnetic semiconductor, (c) is a ferromagnetic zero-gap semiconductor, (d) and (e) are ferromagnetic metals, (f) and (g) are half-metals, and (h), (i), (j), and (k) are ferromagnetic metals.

(a)

(b)

(c)

(d)

(e)

(f)

(g)

(h)

(i)

(j)

(k)