Table of Contents
ISRN Nanotechnology
Volume 2011, Article ID 639714, 3 pages
http://dx.doi.org/10.5402/2011/639714
Research Article

Stacking Fault Energy of Si Nanocrystals Embedded in SiO𝟐

1The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071, China
2Group of Ion Implantation, INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, QC, Canada J3X 1S2

Received 16 February 2011; Accepted 4 April 2011

Academic Editors: M. Cazzanelli, G. A. Kachurin, and D. Tsoukalas

Copyright © 2011 Y. Q. Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Y. Q. Wang, W. S. Liang, and G. G. Ross, “Stacking Fault Energy of Si Nanocrystals Embedded in ,” ISRN Nanotechnology, vol. 2011, Article ID 639714, 3 pages, 2011. https://doi.org/10.5402/2011/639714.