Stacking Fault Energy of Si Nanocrystals Embedded in SiO_𝟐

Figure 1

(a) Typical cross-sectional DF image of the specimen; (b) simulated depth profile of Si implanted (100 keV) into SiO₂ with a fluence of 3 × 10¹⁷ cm⁻².

(a)

(b)