Densification and Microstructural Evolutions during Reaction Sintering of SiC-Si-C Powder Compacts

<table>Changes of density of SiC-Si-C ceramics with RS time at different amounts of Si (5 and 10 wt.%) by using <i>μ</i>-SiC (hollow symbols) and n-SiC (solid symbols) powders. RS temperature was 1400°C and Si/C ratio was 1.</table>

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Figure 4

Figure 4: Densification and Microstructural Evolutions during Reaction Sintering of SiC-Si-C Powder Compacts 