Table of Contents
ISRN Condensed Matter Physics
Volume 2011, Article ID 826941, 3 pages
Research Article

Tunnel Magnetoresistance of Fe𝟑O𝟒/MgO/Fe Nanostructures

1V.A. Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino 141190, Russia
2Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka 142432, Russia

Received 22 July 2011; Accepted 15 August 2011

Academic Editor: M.-H. Phan

Copyright © 2011 S. G. Chigarev et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.