Table of Contents
ISRN Renewable Energy
Volume 2011 (2011), Article ID 934575, 5 pages
http://dx.doi.org/10.5402/2011/934575
Research Article

Effect of Annealing Atmosphere on the Properties of Electrochemically Deposited Cu2ZnSnS4 (CZTS) Thin Films

1Department of Chemistry, Shivaji University, Kolhapur 416 004, India
2Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757, Republic of Korea
3Solar Cell Laboratory, LG Components R & D Center, 1271 Sa-Dong, Sangrok-gu, Ansan-si 426-791, Republic of Korea
4Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 335 Gwahangno, Yuseong-gu, Daejeon 305-701, Republic of Korea

Received 29 June 2011; Accepted 20 July 2011

Academic Editors: A. Alemu and B. Mwinyiwiwa

Copyright © 2011 B. S. Pawar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The Cu2ZnSnS4 (CZTS) thin films have been electrochemically deposited from a weak acidic medium (pH 4.50~5.00) onto Mo- coated and ITO-coated glass substrate by using single-step electrodeposition method. Trisodium citrate was used as a complexing agent. The effect of annealing atmospheres such as Ar, N2, N2+H2S on the structural, morphological, compositional, and optical properties of CZTS thin films has been investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and optical absorption techniques, respectively. XRD studies reveal that the as-deposited CZTS film is amorphous in nature. Upon annealing in different atmospheres, a relatively more intense and sharper diffraction peaks (112), (200), (220), and (312) of kesterite crystal structure with uniform and densely packed surface morphology are observed in N2+H2S atmosphere. Absorption study shows that the band gap energy of as-deposited CZTS thin film is 2.8 eV whereas after annealing, it is found to be 1.48, 1.76, and 1.53 eV for Ar, N2, N2+H2S atmospheres.