Table of Contents
ISRN Thermodynamics
Volume 2012, Article ID 108781, 8 pages
http://dx.doi.org/10.5402/2012/108781
Research Article

Thermodynamics and Oxidation Behaviour of Crystalline Silicon Carbide (3C) with Atomic Oxygen and Ozone

Raman Centre for Applied and Interdisciplinary Sciences, 16A Jheel Road, Calcutta 700 075, India

Received 23 September 2012; Accepted 16 October 2012

Academic Editors: Y. Fang, T. M. Inerbaev, and G. Polidori

Copyright © 2012 Chandrika Varadachari et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Supplementary Material

This program illustrates the derivation of equilibrium diagrams for oxidation of SiC with ozone. The main program OXID2D derives the equilibrium activity diagrams i.e., the equilibrium boundaries. The main program has 2 sub-routines (SubOXID_1 and SubOXID_2), which derive the standard free energy change of the oxidation reaction and equilibrium ozone pressures at temperatures below and above the melting point of SiO2. The sub-routine SubOXID_1 is for reactions in the lower temperature range (298.15-1900 K) where SiO2 is in the solid phase; the sub-routine SubOXID_2 is for reactions at temperatures above the melting point of SiO2 (2000-3200 K). The data from SubOXID_1 & 2 are imported into OXID2D and must be run prior to the main program.

  1. Supplementary Material