A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

<table>Williamson-Hall plot for symmetric (00.2), (00.4), and (00.6) reflections of HVPE GaN on sapphire. Thickness of the epilayer is 5.2 <svg height="10.175" id="M45" style="vertical-align:-2.29482pt" version="1.1" viewbox="0 0 21.799999 10.175" width="21.799999" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,10.175)">
<g transform="translate(72,-63.86)">
<text transform="matrix(1,0,0,-1,-71.95,66.2)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝜇</tspan>
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</text>
</g>
</g>
</svg>. The tilt angle is 2.16 mrad. The volume-weighted correlation length is ~1 <svg height="10.175" id="M46" style="vertical-align:-2.29482pt" version="1.1" viewbox="0 0 21.799999 10.175" width="21.799999" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,10.175)">
<g transform="translate(72,-63.86)">
<text transform="matrix(1,0,0,-1,-71.95,66.2)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝜇</tspan>
<tspan style="font-size: 12.50px; " x="7.6018238" y="0">m</tspan>
</text>
</g>
</g>
</svg>.</table>

International Scholarly Research Notices

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Figure 4

Figure 4: A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching 