Table of Contents
ISRN Condensed Matter Physics
Volume 2012, Article ID 198590, 25 pages
Review Article

Magnetic Mn-Doped Ge Nanostructures

Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USA

Received 4 December 2011; Accepted 9 January 2012

Academic Editors: A. Dinia, K. Haenen, E. Liarokapis, and C. Trallero-Giner

Copyright © 2012 Faxian Xiu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


With the seemly limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next-generation nanometric magnetoelectronic devices; particularly, the electric field control of ferromagnetic transition in dilute magnetic semiconductor (DMS) systems offers the magnetoelectronic devices a potential for low power consumption and low variability. Special attention has been given to technologically important group IV semiconductor based DMSs, with a prominent position for Mn doped Ge. In this paper, we will first review the current theoretical understanding on the ferromagnetism in MnxGe1−x DMS, pointing out the possible physics models underlying the complicated ferromagnetic behavior of MnxGe1−x. Then we carry out detailed analysis of MnxGe1−x thin films and nanostructures grown by molecular beam epitaxy. We show that with zero and one dimension quantum structures, superior magnetic properties of MnxGe1−x compared with bulk films can be obtained. More importantly, with MnxGe1−x nanostructures, such as quantum dots, we demonstrate a field controlled ferromagnetism up to 100 K. Finally we provide a prospective of the future development of ferromagnetic field effect transistors and magnetic tunneling junctions/memories using dilute and metallic MnxGe1−x dots, respectively. We also point out the bottleneck problems in these fields and rendering possible solutions to realize practical spintronic devices.