Effect of Excess Silicon on the Formation of Ti₃SiC₂ Using Free Ti/Si/C Powders Synthesized via Arc Melting

Figure 6

FESEM micrograph of as-polished samples containing different content of excess Si; (a) 𝑥=0, (b) 𝑥=0.1, (c) 𝑥=0.15, (d) 𝑥=0.2, (e) 𝑥=0.25, (f) 𝑥=0.3, (g) 𝑥=0.4, and (h) 𝑥=0.5 arced at a constant 90 A for 5 s.

(a)

(b)

(c)

(d)

(e)

(f)

(g)

(h)