Effect of Excess Silicon on the Formation of Ti₃SiC₂ Using Free Ti/Si/C Powders Synthesized via Arc Melting

Table 3

Results obtained by different excess Si contents in starting reactant.

Stage	No.	Reactants	Arcing parameters		Phases detected (weight fraction, wt%)								Lattice parameters Ti3SiC2
			I (A)	t (s)	Ti3SiC2	TiC	Ti5Si3	TiSi2	α-Ti	C	𝑅exp	S	a = b (́Å)	c (́Å)
2	10	3Ti + Si + 2C	90	5	62.2	37.8	—	—	—	—	11.418	2.068	3.0715	17.6900
	11	3Ti + 1.1Si + 2C	90	5	74.2	24.9	—	0.9	—	—	10.418	2.068	3.0681	17.6657
	12	3Ti + 1.15Si + 2C	90	5	76.7	21.2	—	2.1	—	—	12.432	1.443	3.0699	17.6860
	13	3Ti + 1.2Si + 2C	90	5	86.9	9.4	—	3.8	—	—	12.619	2.326	3.0686	17.6746
	14	3Ti + 1.25Si + 2C	90	5	64.6	30.4	—	5.0	—	—	11.767	1.384	3.0718	17.6887
	15	3Ti + 1.3Si + 2C	90	5	56.1	32.0	—	11.9	—	—	11.569	2.447	3.0689	17.6680
	16	3Ti + 1.4Si + 2C	90	5	54.6	41.3	—	2.7	0.4	1.0	10.292	1.258	3.0694	17.6920
	17	3Ti + 1.5Si + 2C	90	5	30.0	47.8	4.0	6.2	1.7	1.3	12.848	2.806	3.0666	17.6407