Table of Contents
ISRN Nanomaterials
Volume 2012, Article ID 429348, 9 pages
http://dx.doi.org/10.5402/2012/429348
Research Article

Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process

1Physics of Energy Harvesting Division, National Physical Laboratory, CSIR, Dr. K.S. Krishnan Road, New Delhi 110012, India
2Department of Physics, Banaras Hindu University, Varanasi 221005, India

Received 16 April 2012; Accepted 29 May 2012

Academic Editors: T. Benameur, M. R. Ferreira, and S.-H. Kim

Copyright © 2012 Jhuma Gope et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Jhuma Gope, Sushil Kumar, A. Parashar, S. Dayal, C. M. S. Rauthan, and P. C. Srivastava, “Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process,” ISRN Nanomaterials, vol. 2012, Article ID 429348, 9 pages, 2012. https://doi.org/10.5402/2012/429348.