Table of Contents
ISRN Nanomaterials
Volume 2012, Article ID 429348, 9 pages
http://dx.doi.org/10.5402/2012/429348
Research Article

Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process

1Physics of Energy Harvesting Division, National Physical Laboratory, CSIR, Dr. K.S. Krishnan Road, New Delhi 110012, India
2Department of Physics, Banaras Hindu University, Varanasi 221005, India

Received 16 April 2012; Accepted 29 May 2012

Academic Editors: T. Benameur, M. R. Ferreira, and S.-H. Kim

Copyright © 2012 Jhuma Gope et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. H. Y. Peng, J. L. Wang, L. Wang, and B. Zhou, “The influence of annealing on mechanical properties of hydrogenated nanocrystalline silicon thin films,” Journal of Physics, vol. 152, Article ID 012016, 2009. View at Google Scholar
  2. Y. S. Zou, Y. F. Wu, R. F. Huang, C. Sun, and L. S. Wen, “Mechanical properties and thermal stability of nitrogen incorporated diamond-like carbon films,” Vacuum, vol. 83, no. 11, pp. 1406–1410, 2009. View at Publisher · View at Google Scholar · View at Scopus
  3. V. Bursikova, P. Sladek, P. Stahel, and J. Bursik, “Mechanical properties of thin silicon films deposited on glass and plastic substrates studied by depth sensing indentation technique,” Journal of Non-Crystalline Solids, vol. 352, p. 1242, 2006. View at Publisher · View at Google Scholar
  4. A. Tekaya, S. Labdi, T. Benameur, A. Piatkowska, P. Aubert, and J. Jagielski, “Synthesis and optimization of Ti-TiN multilayered protective nanocoatings on Zr-based bulk metallic glass,” Surface and Coatings Technology, vol. 205, no. 11, pp. 3404–3410, 2011. View at Publisher · View at Google Scholar · View at Scopus
  5. A. Tekaya, S. Labdi, T. Benameur, and A. Jellad, “Quasi-static cyclic loadings induced inelastic deformation in a Zr-based bulk metallic glass under nanoindentation,” Journal of Materials Science, vol. 44, no. 18, pp. 4930–4938, 2009. View at Publisher · View at Google Scholar · View at Scopus
  6. I. Kobayashi, T. Ogawa, and S. Hotta, “Plasma-enhanced chemical vapor deposition of silicon nitride,” Japanese Journal of Applied Physics, vol. 31, pp. 336–342, 1992. View at Publisher · View at Google Scholar
  7. T. Itoh, K. Yamamoto, H. Harada et al., “Role of hydrogen in hydrogenated microcrystalline silicon,” Solar Energy Materials and Solar Cells, vol. 66, no. 1–4, pp. 239–244, 2001. View at Publisher · View at Google Scholar · View at Scopus
  8. D. L. Staebler and C. R. Wronski, “Reversible conductivity changes in discharge-produced amorphous Si,” Applied Physics Letters, vol. 31, p. 292, 1977. View at Publisher · View at Google Scholar
  9. J. Meier, R. Fluckiger, H. Keppner, and A. Shah, “Complete microcrystalline p-i-n solar cell—crystalline or amorphous cell behavior?” Applied Physics Letters, vol. 65, p. 860, 1994. View at Publisher · View at Google Scholar
  10. M. Kondo and A. Matsuda, “Novel aspects in thin film silicon solar cells-amorphous, microcrystalline and nanocrystalline silicon,” Thin Solid Films, vol. 457, no. 1, pp. 97–102, 2004. View at Publisher · View at Google Scholar · View at Scopus
  11. S. Kumar, J. Gope, A. Kumar, A. Parashar, C. M. S. Rauthan, and P. N. Dixit, “High pressure growth of nanocrystalline silicon films,” Journal of Nanoscience and Nanotechnology, vol. 8, no. 8, pp. 4211–4217, 2008. View at Publisher · View at Google Scholar · View at Scopus
  12. T. Itoh, K. Yamamoto, K. Ushikoshi, S. Nonomura, and S. Nitta, “Characterization and role of hydrogen in nc-Si:H,” Journal of Non-Crystalline Solids, vol. 266-269, pp. 201–205, 2000. View at Google Scholar · View at Scopus
  13. M. Zhu, Y. Cao, X. Guo, J. Liu, M. He, and K. Sun, “Microstructure of poly-Si thin films prepared at low temperatures,” Solar Energy Materials and Solar Cells, vol. 62, p. 109, 2000. View at Google Scholar
  14. D. Han, K. Wang, J. M. Owens et al., “Hydrogen structures and the optoelectronic properties in transition films from amorphous to microcrystalline silicon prepared by hot-wire chemical vapor deposition,” Journal of Applied Physics, vol. 93, no. 7, pp. 3776–3783, 2003. View at Publisher · View at Google Scholar · View at Scopus
  15. H. Shanks, C. J. Fang, L. Ley, M. Cardona, F. J. Demond, and S. Kalbitzer, “Infrared spectrum and structure of hydrogenated amorphous silicon,” Physica Status Solidi (B), vol. 100, p. 43, 1980. View at Publisher · View at Google Scholar
  16. S. Kumar, P. N. Dixit, D. Sarangi, and R. Bhattacharya, “High rate deposition of diamond like carbon films by very high frequency plasma enhanced chemical vapor deposition at 100 MHz,” Journal of Applied Physics, vol. 93, p. 6361, 2003. View at Publisher · View at Google Scholar
  17. J. Qi, J. Luo, S. Wen, J. Wang, and W. Li, “Mechanical and tribological properties of non-hydrogenated DLC films synthesized by IBAD,” Surface and Coatings Technology, vol. 128-129, p. 324, 2000. View at Publisher · View at Google Scholar
  18. M. Sakai, “Energy principle of the indentation-induced inelastic surface deformation and hardness of brittle materials,” Acta Metallurgica et Materialia, vol. 41, pp. 1751–1758, 1993. View at Publisher · View at Google Scholar
  19. G. G. Stoney, “The tension of metallic films deposited by electrolysis,” Proceedings of the Royal Society A, vol. 82, no. 553, pp. 172–175, 1909. View at Publisher · View at Google Scholar
  20. J. Dutta, U. Kroll, P. Chabloz et al., “Dependence of intrinsic stress in hydrogenated amorphous silicon on excitation frequency in a plasma-enhanced chemical vapor deposition process,” Journal of Applied Physics, vol. 72, no. 7, pp. 3220–3222, 1992. View at Publisher · View at Google Scholar · View at Scopus
  21. P. L. Ong, J. Wei, F. E. H. Tay, and C. Iliescu, “A new fabrication method for low stress PECVD—SiNx layers,” Journal of Physics, vol. 34, no. 1, pp. 764–769, 2006. View at Publisher · View at Google Scholar · View at Scopus
  22. K. D. Mackenzie, D. J. Johnson, M. W. DeVre, R. J. Westerman, and B. H. Reelfs, “Stress control of Si-based PECVD dielectrics,” in Proceedings of the 207th Electrochemical Society Meeting, pp. 148–159, May 2005. View at Scopus
  23. E. P. van de Ven, I. W. Connick, and A. S. Harrus, “Advantages of dual frequency PECVD for deposition of ILD and passivation films,” in Proceedings of the 7th International IEEE VLSI Multilevel Interconnection Conference, pp. 194–201, June 1990. View at Scopus
  24. J. Lopata, W. C. Dautremont-Smith, and J. W. Lee, “Control and variation of stress in pecvd SiNx films on InP,” Materials Research Society Symposium Proceedings, vol. 130, p. 361, 1989. View at Publisher · View at Google Scholar
  25. J. Fontaine, J. L. Loubet, T. Le Mogne, and A. Grill, “Superlow friction of diamond-like carbon films: a relation to viscoplastic properties,” Tribology Letters, vol. 17, no. 4, pp. 709–714, 2004. View at Publisher · View at Google Scholar · View at Scopus
  26. J. Zi, H. Buescher, C. Faler, W. Ludwig, K. Zhang, and X. Xie, “Raman shifts in Si nanocrystals,” Applied Physics Letters, vol. 69, p. 200, 1996. View at Google Scholar