Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process

Table 1

Deposition parameters, film thickness, and bonded hydrogen content (𝐶_H) of nc-Si : H films.

Sample	VHF power (W)	MW power (W)	Thickness (nm)	𝐶H (at. %)
A	20	x	1100 ± 20	3.9
B	40	x	700 ± 15	6.5
C	5	25	800 ± 17	3.6
D	10	25	720 ± 8	5.2